• Part: HYG045P03LQ1C2
  • Description: Single P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 937.75 KB
Download HYG045P03LQ1C2 Datasheet PDF
HUAYI
HYG045P03LQ1C2
HYG045P03LQ1C2 is Single P-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature Description - -30V/-80A RDS(ON)= 3.8 mΩ (typ.) @VGS = -10V RDS(ON)= 6.2 mΩ (typ.) @VGS = -4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PPAK5- 6-8L Applications - Switching Application - Power Management for DC/DC - Battery Protection Single P-Channel MOSFET Ordering and Marking Information C2 G045P03 XYMXXXXXX Package Code C2: PPAK5- 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Maximum Junction Temperature TSTG Storage Temperature...