Datasheet Details
Part number
HYG046N04LQ1C2
Manufacturer
HUAYI
File Size
495.40 KB
Description
Single N-Channel Enhancement Mode MOSFET
Datasheet
Full PDF Text Transcription for HYG046N04LQ1C2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HYG046N04LQ1C2 . For precise diagrams, and layout, please refer to the original PDF.
HYG046N04LQ1C2 Single N-Channel Enhancement Mode MOSFET Feature 40V/70A RDS(ON)= 4.3mΩ(typ.)@VGS = 10V RDS(ON)= 6.9mΩ(typ.)@VGS = 4.5V 100% Avalanche Tested Reliabl...
View more extracted text
10V RDS(ON)= 6.9mΩ(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DC Battery Protection Ordering and Marking Information Single N-Channel MOSFET C2 G046N04 XXXXXXXXX Package Code C2: PPAK5*6-8L Date Code XXXXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
More Datasheets from HUAYI
HYG046N04LQ1C2 Datasheet
