HYG046N04LQ1C2
Overview
- 40V/70A RDS(ON)= 4.3mΩ(typ.)@VGS = 10V RDS(ON)= 6.9mΩ(typ.)@VGS = 4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Halogen- Free Devices Available
| Part | HYG046N04LQ1C2 |
|---|---|
| Description | Single N-Channel Enhancement Mode MOSFET |
| Category | MOSFET |
| Manufacturer | HUAYI |
| Size | 495.40 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |