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HYG050N08NS1B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG050N08NS1P/B Feature  80V/130A RDS(ON)= 4 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power management for inverter systems  Motor control N-Channel MOSFET Ordering and Marking Information P G050N08 XYMXXXXXX B G050N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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