Datasheet Details
| Part number | HYG050N08NS1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 807.45 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG050N08NS1P-HUAYI.pdf |
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Overview: HYG050N08NS1P/B Feature 80V/130A RDS(ON)= 4 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET.
| Part number | HYG050N08NS1P |
|---|---|
| Manufacturer | HUAYI |
| File Size | 807.45 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG050N08NS1P-HUAYI.pdf |
|
|
|
DS G TO-220FB-3L G DS TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET Ordering and Marking Information P G050N08 XYMXXXXXX B G050N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
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| HYG055N08NS1C2 | N-Channel Enhancement Mode MOSFET |