• Part: HYG060N08NS1D
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 697.08 KB
Download HYG060N08NS1D Datasheet PDF
HUAYI
HYG060N08NS1D
Feature - 80V/80A RDS(ON)=5.7 mΩ(typ.)@VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Lead-Free and Green Devices Available (Ro HS pliant) Applications - Switching application - Power management for inverter systems Pin Description S GD TO-252-2L S GD TO-251-3L TO-251-3S N-Channel MOSFET Ordering and Marking Information G060N08 XYMXXXXXX G060N08 XYMXXXXXX G060N08 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the...