Download the HYG060N08NS1V datasheet PDF.
This datasheet also covers the HYG060N08NS1D variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
S GD
TO-252-2L
S GD
TO-251-3L
S D G
TO-251-3S
N-Channel MOSFET
Ordering and Marking Information
D
G060N08
XYMXXXXXX
U
G060N08
XYMXXXXXX
V
G060N08
XYMXXXXXX
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die at
Full PDF Text Transcription for HYG060N08NS1V (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HYG060N08NS1V. For precise diagrams, and layout, please refer to the original PDF.
HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature 80V/80A RDS(ON)=5.7 mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green D...
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100% Avalanche Tested Reliable and Rugged Lead-Free and Green DevicesAvailable (RoHS Compliant) Applications Switching application Power management for inverter systems Pin Description S GD TO-252-2L S GD TO-251-3L S D G TO-251-3S N-Channel MOSFET Ordering and Marking Information D G060N08 XYMXXXXXX U G060N08 XYMXXXXXX V G060N08 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HYG060N08NS1V Datasheet
