HYG060N08NS1V datasheet by HUAYI.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HYG060N08NS1V |
|---|---|
| Datasheet | HYG060N08NS1V HYG060N08NS1D Datasheet (PDF) |
| File Size | 697.08 KB |
| Manufacturer | HUAYI |
| Description | N-Channel Enhancement Mode MOSFET |
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TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Part Number | Description |
|---|---|
| HYG060N08NS1B | N-Channel Enhancement Mode MOSFET |
| HYG060N08NS1D | N-Channel Enhancement Mode MOSFET |
| HYG060N08NS1P | N-Channel Enhancement Mode MOSFET |
| HYG060N08NS1U | N-Channel Enhancement Mode MOSFET |
| HYG060N15NS1B | N-Channel Enhancement Mode MOSFET |
| HYG060N15NS1P | N-Channel Enhancement Mode MOSFET |
| HYG063N09NS1P | N-Channel Enhancement Mode MOSFET |
| HYG064N08NA1B | N-Channel Enhancement Mode MOSFET |
| HYG064N08NA1P | N-Channel Enhancement Mode MOSFET |
| HYG065N07NS1B | N-Channel Enhancement Mode MOSFET |
