Download the HYG064N08NA1B datasheet PDF.
This datasheet also covers the HYG064N08NA1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
DS G
TO-220FB-3L
G DS
TO-263-2L
Applications
Switching application
Power management for inverter system
N-Channel MOSFET
Ordering and Marking Information
P G064N08
XYMXXXXXX
B G064N08
XYMXXXXXX
Package Code P :TO-220FB-3L
Date Code XYMXXXXXX
B:TO-263-2L
Note: HUAYI lead-free pr
Full PDF Text Transcription for HYG064N08NA1B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HYG064N08NA1B. For precise diagrams, and layout, please refer to the original PDF.
HYG064N08NA1P/B Feature 80V/120A RDS(ON)= 6.4mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green DevicesAvailable (RoHS Compliant) N-...
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and Rugged Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Marking Information P G064N08 XYMXXXXXX B G064N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for M
HYG064N08NA1B Datasheet
