• Part: HYG064N08NA1P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 858.10 KB
Download HYG064N08NA1P Datasheet PDF
HUAYI
HYG064N08NA1P
Feature - 80V/120A RDS(ON)= 6.4mΩ(typ.)@VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Lead-Free and Green Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications - Switching application - Power management for inverter system N-Channel MOSFET Ordering and Marking Information P G064N08 XYMXXXXXX B G064N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to...