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HYG064N08NA1P - N-Channel Enhancement Mode MOSFET

General Description

DS G TO-220FB-3L G DS TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Marking Information P G064N08 XYMXXXXXX B G064N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free pr

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Datasheet Details

Part number HYG064N08NA1P
Manufacturer HUAYI
File Size 858.10 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG064N08NA1P Datasheet

Full PDF Text Transcription for HYG064N08NA1P (Reference)

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HYG064N08NA1P/B Feature  80V/120A RDS(ON)= 6.4mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-...

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and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power management for inverter system N-Channel MOSFET Ordering and Marking Information P G064N08 XYMXXXXXX B G064N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for M