• Part: HYG072N10LS1P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.11 MB
Download HYG072N10LS1P Datasheet PDF
HUAYI
HYG072N10LS1P
HYG072N10LS1P is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - 100V/80A RDS(ON)= 6.7 mΩ(typ.) @ VGS = 10V RDS(ON)= 9.6mΩ(typ.) @ VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Lead- Free Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L Applications - High Frequency Point-of-Load Synchronous Buck Converter - Power Management for DC/DC - Switching Application Ordering and Marking Information N-Channel MOSFET G072N10 XYMXXXXXX Package Code P: TO-220FB-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature Range TSTG Storage Temperature Range Source Current-Continuous(Body Diode) Tc=25°C Mounted on Large Heat Sink Pulsed Drain Current -...