• Part: HYG110P04LQ1C2
  • Description: Single P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 820.39 KB
Download HYG110P04LQ1C2 Datasheet PDF
HUAYI
HYG110P04LQ1C2
HYG110P04LQ1C2 is Single P-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - -40V/-50A - RDS(ON)= 8.9mΩ(typ.) @VGS = -10V RDS(ON)= 13mΩ(typ.) @VGS = -4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen free and Green Devices Available (Ro HS pliant) Pin Description D D DD S S SG S SSG D D DD Pin1 PPAK5- 6-8L Applications - Switching Application - Power Management for DC/DC - Battery Protection Ordering and Marking Information Single P-Channel MOSFET C2 G110P04 XYMXXXXXX Package Code C2: PPAK5- 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature Range TSTG Storage Temperature...