• Part: HYG110P04LQ2D
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 650.00 KB
Download HYG110P04LQ2D Datasheet PDF
HUAYI
HYG110P04LQ2D
HYG110P04LQ2D is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature z -40V/-50A RDS(ON)= 9.4mΩ(typ.) @VGS = -10V RDS(ON)= 13 mΩ(typ.) @VGS = -4.5V z 100% avalanche tested z Reliable and Rugged z Halogen Free and Green Devices Available (Ro HS pliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications z Switching application z Power Management in DC/DC converter. z Battery protection P-Channel MOSFET Ordering and Marking Information D G110P04 XYMXXXXX U G110P04 XYMXXXXX V G110P04 XYMXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes to improve reliability or manufacturability without notice, and Advise customers to obtain the latest version of relevant information to verify before placing orders. .hymexa. V1.0 HYG110P04LQ2 D/U/V Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature Range TSTG Storage Temperature Range Drain Current-Continuous Tc=25°C Mounted on Large Heat...