HYG110P04LQ2U
HYG110P04LQ2U is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
- Part of the HYG110P04LQ2D comparator family.
- Part of the HYG110P04LQ2D comparator family.
Feature z -40V/-50A RDS(ON)= 9.4mΩ(typ.) @VGS = -10V RDS(ON)= 13 mΩ(typ.) @VGS = -4.5V z 100% avalanche tested z Reliable and Rugged z Halogen Free and Green Devices Available
(Ro HS pliant)
Pin Description
TO-252-2L TO-251-3L
TO-251-3S
Applications z Switching application z Power Management in DC/DC converter. z Battery protection
P-Channel MOSFET
Ordering and Marking Information
D G110P04
XYMXXXXX
U G110P04
XYMXXXXX
V G110P04
XYMXXXXX
Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code XYMXXXXX
Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes to improve reliability or manufacturability without notice, and Advise customers to obtain the latest version of relevant information to verify before placing orders.
.hymexa.
V1.0
HYG110P04LQ2 D/U/V
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Junction Temperature Range
TSTG
Storage Temperature Range
Drain Current-Continuous
Tc=25°C
Mounted on Large Heat...