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HYG110P04LQ2U - N-Channel Enhancement Mode MOSFET

Download the HYG110P04LQ2U datasheet PDF (HYG110P04LQ2D included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode mosfet.

Description

z Switching application z Power Management in DC/DC converter.

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Note: The manufacturer provides a single datasheet file (HYG110P04LQ2D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG110P04LQ2U
Manufacturer HUAYI
File Size 650.00 KB
Description N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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HYG110P04LQ2 D/U/V P-Channel Enhancement Mode MOSFET Feature z -40V/-50A RDS(ON)= 9.4mΩ(typ.) @VGS = -10V RDS(ON)= 13 mΩ(typ.) @VGS = -4.5V z 100% avalanche tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications z Switching application z Power Management in DC/DC converter. z Battery protection P-Channel MOSFET Ordering and Marking Information D G110P04 XYMXXXXX U G110P04 XYMXXXXX V G110P04 XYMXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish; which are fully compliant with RoHS.
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