HYG110P04LQ2U Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Download the HYG110P04LQ2U datasheet PDF. This datasheet also includes the HYG110P04LQ2D variant, as both parts are published together in a single manufacturer document.

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HYG110P04LQ2U n-channel enhancement mode mosfet by HUAYI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HYG110P04LQ2D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HYG110P04LQ2U
Manufacturer	HUAYI
File Size	650.00 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HYG110P04LQ2U Datasheet

General Description

GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications z Switching application z Power Management in DC/DC converter.

z Battery protection P-Channel MOSFET Ordering and Marking Information D G110P04 XYMXXXXX U G110P04 XYMXXXXX V G110P04 XYMXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;

which are fully compliant with RoHS.

Overview

HYG110P04LQ2 D/U/V P-Channel Enhancement Mode MOSFET Feature z -40V/-50A RDS(ON)= 9.4mΩ(typ.) @VGS = -10V RDS(ON)= 13 mΩ(typ.) @VGS = -4.

More Datasheets from HUAYI

Part Number	Description
HYG110P04LQ2C2	P-Channel Enhancement Mode MOSFET
HYG110P04LQ2D	N-Channel Enhancement Mode MOSFET
HYG110P04LQ2V	N-Channel Enhancement Mode MOSFET
HYG110P04LQ1C2	Single P-Channel Enhancement Mode MOSFET
HYG110P04LQ1D	P-Channel MOSFET
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HYG110P04LQ1V	P-Channel MOSFET
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