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HYG200N12NS1C2 - N-Channel Enhancement Mode MOSFET

General Description

DDDD DDDD SSSG GSSS Pin1 PDFN8L(5x6) Ordering and Marking Information C2 G200N12 XYMXXXXXX N-Channel MOSFET Package Code C2 :PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fu

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Datasheet Details

Part number HYG200N12NS1C2
Manufacturer HUAYI
File Size 1.45 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG200N12NS1C2 Datasheet

Full PDF Text Transcription (Reference)

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HYG200N12NS1C2 N-Channel Enhancement Mode MOSFET Feature  120V/60A RDS(ON)=14.7mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  High Frequency Synchronous Buck Converter Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN8L(5x6) Ordering and Marking Information C2 G200N12 XYMXXXXXX N-Channel MOSFET Package Code C2 :PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.