HVGT 1N6513
Ultra-Fast Recovery High Voltage Silicon Rectifying Diode
FEATURES
: High reliability design. GPP chip. High frequency, super fast recovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in the surface.APPLICATIONS
: HVGT Name: Unit: (mm) High voltage multiplier circuit. DO-590 X-ray power supply. Lead Diameter 1.28±0.03 General purpose high voltage rectifier. Other.MECHANICAL DATA
: Case: epoxy resin molding. Terminal: welding axis. Net weight: 2.1 grams (approx). 29.0 (min) 9.0 (±0.5)MAXIMUM RATINGS
And Characteristics: (ABSOLUTE MAXIMUM RATINGS
) 29.0 (min) 5.0 (±0.2) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C Non-Repetitive Peak Renerse Voltage VRSM TA=25°C Average Forward Current Maximum IFAVM TA=55°C TOIL=100°C Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS Junction Temperature TJ Allowable Operation Case Temperature Tc Storage Temperature TSTGELECTRICAL CHARACTERISTICS
: TA=25°C (Unless Otherwise Specified) Items Symbols Condition 2.0 -2.