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1N6513 Datasheet PDF

HVGT 1N6513

Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

Part No. 1N6513
Datasheet 1N6513 Download
Manufacturer
HVGT
Description Ultra-Fast Recovery High Voltage Silicon Rectifying Diode
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1N6513 datasheet page 1 preview

FEATURES

: High reliability design. GPP chip. High frequency, super fast recovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in the surface.

APPLICATIONS

: HVGT Name: Unit: (mm) High voltage multiplier circuit. DO-590 X-ray power supply. Lead Diameter 1.28±0.03 General purpose high voltage rectifier. Other.

MECHANICAL DATA

: Case: epoxy resin molding. Terminal: welding axis. Net weight: 2.1 grams (approx). 29.0 (min) 9.0 (±0.5)

MAXIMUM RATINGS

And Characteristics: (

ABSOLUTE MAXIMUM RATINGS

) 29.0 (min) 5.0 (±0.2) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C Non-Repetitive Peak Renerse Voltage VRSM TA=25°C Average Forward Current Maximum IFAVM TA=55°C TOIL=100°C Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS Junction Temperature TJ Allowable Operation Case Temperature Tc Storage Temperature TSTG

ELECTRICAL CHARACTERISTICS

: TA=25°C (Unless Otherwise Specified) Items Symbols Condition 2.0 -2.
1N6513 page 2 preview