1N6513 - Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

HVGT

Key Features

High reliability design. GPP chip. High frequency, super fast recovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in the surface.

1N6513 ultra-fast recovery high voltage silicon rectifying diode by HVGT - Datasheet Preview

Datasheet Details

Part number	1N6513
Manufacturer	HVGT
File Size	438.73 KB
Description	Ultra-Fast Recovery High Voltage Silicon Rectifying Diode
Datasheet	1N6513 Datasheet

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1N6513 2.0A 2.0kV 70nS Ultra-Fast Recovery High Voltage Silicon Rectifying Diode ----------------------------------------------------------------------------------------------------------------------------- ------- Introduce: Reference Shape: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. Features: High reliability design. GPP chip. High frequency, super fast recovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in the surface. Applications: HVGT Name: Unit: (mm) High voltage multiplier circuit. DO-590 X-ray power supply. Lead Diameter 1.28±0.