1N6513 Datasheet and Specifications PDF

The 1N6513 is a ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER.

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Part Number1N6513 Datasheet
ManufacturerSSDI
Overview Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * Designer’s Data Sheet Part Number / Ordering I.
* Fast recovery: 70 nsec maximum
* PIV to 10 KV
* Hermetically sealed axial and surface mount package
* Void-free ceramic frit glass construction
* High temperature Category I eutectic metallurgical bond
* Excellent thermal shock performance
* For use in high voltage systems
* 175°C maximum operati.
Part Number1N6513 Datasheet
DescriptionUltra-Fast Recovery High Voltage Silicon Rectifying Diode
ManufacturerHVGT
Overview 1N6513 2.0A 2.0kV 70nS Ultra-Fast Recovery High Voltage Silicon Rectifying Diode --------------------------------------------------------------------------------------------------------------------. High reliability design. GPP chip. High frequency, super fast recovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in the surface. Applications: HVGT Name: Unit: (mm) High voltage multiplier circuit. DO-590 X-ray power supply. Lead Diameter 1.28±0.03 General pur.
Part Number1N6513 Datasheet
Description0.5A - 2.0A RECTIFIERS
ManufacturerDigitron Semiconductors
Overview 1N6513, 1N6515, 1N6517, 1N6519 High-reliability discrete products and engineering services since 1977 0.5A – 2.0A RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-195.
* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
* Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
* 2,000V to 10,000V working reverse voltage
* 70ns recovery time
* Operating temperature range .
Part Number1N6513 Datasheet
DescriptionSpice Model
ManufacturerVMI
Overview Spice Model 1N6513 Electrical Characteristics and Maximum Ratings Part Working Number Reverse Voltage (Vrwm) Average Rectified Current (Io) Reverse Current @ Vrwm (Ir) Forward V. apacitance Bulk junction potential Grading coefficient Energy-band gap Temperature coefficient Flicker-noise coefficient Flicker-noise exponent Coefficient for capacitance Diode breakdown voltage Diode breakdown current Value 5.0E-07 7.2 25 0.14 70 56.64 1.67 0.5 1.11 3 0 1 0.5 2200 100 Units Amps.