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HX3400 - P-Channel MOSFET

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Features

  • High Power and current handing capability Lead free product is acquired Surface Mout Package.

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Datasheet Details

Part number HX3400
Manufacturer HXDZ
File Size 152.75 KB
Description P-Channel MOSFET
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SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mout Package MARKING: XORB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 30 V VGS Gate-Source voltage ±12 V ID Drain current 5.8 A PD Power Dissipation 1.4 W Tj Junction Temperature -55-150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.7 1.0 1.
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