• Part: S5870
  • Description: Si PIN photodiode
  • Category: Diode
  • Manufacturer: Hamamatsu Corporation
  • Size: 322.83 KB
Download S5870 Datasheet PDF
Hamamatsu Corporation
S5870
S5870 is Si PIN photodiode manufactured by Hamamatsu Corporation.
Features l Large active area S5980: 5 × 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow l Thin package: 1.26 mmt l Photo sensitivity: 0.72 A/W (λ=960 nm) s General ratings Parameter Window material Gap between elements Active area Symbol A S5980 5.0/4 elements Applications l Laser beam axis alignment l Level meters l Pointing devices, etc. S5981 Resin coating 30 10.0/4 elements S5870 10.0/2 elements Unit µm mm s Absolute maximum ratings Parameter Symbol Reverse voltage VR Max. O perating tem perature Topr Storage temperature Tstg S5980 S5981 30 -40 to +100 -40 to +125 Unit V °C °C s Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Symbol Condition S5980 Typ. Max. Spectral response range λ 320 to 1100 - Peak sensitivity wavelength λp - Photo sensitivity S λ=λp - Dark current ID VR=10 V 0.3 2 Tem perature coefficient of ID TCID - Cut-off frequency fc VR=10 V, RL=50 Ω, -3 d B 25 - Term inal capacitance Ct VR=10 V, f=1 MHz - N oise equivalent power NEP VR=10 V,...