S5870
S5870 is Si PIN photodiode manufactured by Hamamatsu Corporation.
Features l Large active area S5980: 5 × 5 mm S5981: 10 × 10 mm
S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow l Thin package: 1.26 mmt l Photo sensitivity: 0.72 A/W (λ=960 nm) s General ratings
Parameter Window material Gap between elements Active area
Symbol A
S5980 5.0/4 elements
Applications l Laser beam axis alignment l Level meters l Pointing devices, etc.
S5981 Resin coating
30 10.0/4 elements
S5870 10.0/2 elements
Unit µm mm s Absolute maximum ratings
Parameter
Symbol
Reverse voltage VR Max.
O perating tem perature Topr
Storage temperature Tstg
S5980
S5981 30
-40 to +100 -40 to +125
Unit V °C °C s Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
S5980 Typ. Max.
Spectral response range λ
320 to 1100
- Peak sensitivity wavelength
λp
- Photo sensitivity
S λ=λp
- Dark current
ID VR=10 V
0.3 2
Tem perature coefficient of ID TCID
- Cut-off frequency fc VR=10 V, RL=50 Ω, -3 d B 25
- Term inal capacitance Ct VR=10 V, f=1 MHz
- N oise equivalent power NEP VR=10 V,...