HMN1M8DV Datasheet PDF | Hanbit Electronics

Hanbit Electronics HMN1M8DV

The HMN1M8DV Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits. The HMN1M8DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data.

Part No.	HMN1M8DV
Datasheet	HMN1M8DV Download
Manufacturer	Hanbit Electronics
Description	Non-Volatile SRAM
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GENERAL DESCRIPTION

In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMN1M8DV uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

w Access time : 70, 85, 120, 150 ns w High-density design : 8Mbit Design w Battery internally isolated until power is applied w Industry-standard 36-pin 1,024K x 8 pinout w Unlimited write cycles w Data retention in the absence of VCC w 10-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Data is automatically protected during power loss PIN ASSIGNMENT NC NC A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28...