HMN4M8D Datasheet PDF | Hanbit Electronics

Hanbit Electronics HMN4M8D

The HMN4M8D Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits. The HMN4M8D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data.

Part No.	HMN4M8D
Datasheet	HMN4M8D Download
Manufacturer	Hanbit Electronics
Description	Non-Volatile SRAM MODULE 32Mbit
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GENERAL DESCRIPTION

In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The HMN4M8D uses extremely low standby current CMOS SRAM ’s, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.

FEATURES

w Access time : 70, 85, 120, 150 ns w High-density design : 32Mbit Design w Battery internally isolated until power is applied w Industry-standard 40-pin 4,096K x 8 pinout w Unlimited write cycles w Data retention in the absence of VCC w 5-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Data is automatically protected during power loss w Industrial temperature operation PIN ASSIGNMENT NC A21 A20 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS NC 1 2 3 4 5 6 7 8 9 10 11 12 13...