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HMS1M32Z8L - SRAM MODULE 4Mbyte

Download the HMS1M32Z8L datasheet PDF. This datasheet also covers the HMS1M32M8L variant, as both devices belong to the same sram module 4mbyte family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMS1M32M8L is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit configuration.

The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.

Key Features

  • w Part identification - HMS1M32M8L : SIMM design - HMS1M32Z8L : ZIP design The both are Pin to Pin Compatible w Access times : 55ns, 70ns w High-density 4MByte design w High-reliability, low-power design w Single + 5V ±0.5V power supply w Low data retention voltage : 2V(min) w Three state output and TTL-compatible w FR4-PCB design www. DataSheet4U. com PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS1M32M8L_HanbitElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMS1M32Z8L
Manufacturer Hanbit Electronics
File Size 127.81 KB
Description SRAM MODULE 4Mbyte
Datasheet download datasheet HMS1M32Z8L Datasheet

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Other Datasheets by Hanbit Electronics

Part Number Description
HMS1M32Z8 SRAM MODULE 4Mbyte
HMS1M32Z8A SRAM
HMS1M32Z8S High-Speed SRAM MODULE 4Mbyte
HMS1M32Z8V SRAM MODULE 4Mbyte
HMS1M32M8A SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HANBit HMS1M32M8L SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V Part No. HMS1M32M8L, HMS1M32Z8L GENERAL DESCRIPTION The HMS1M32M8L is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board. The HMS1M32M8L also support low data retention voltage for battery back-up operations with low data retention current. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4M bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.