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HMS1M32Z8V - SRAM MODULE 4Mbyte

Download the HMS1M32Z8V datasheet PDF. This datasheet also covers the HMS1M32M8V variant, as both devices belong to the same sram module 4mbyte family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMS1M32M8V is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration.

The module consists of eight 1M x 4 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board.

Key Features

  • Part identification - HMS1M32M8V : SIMM design - HMS1M32Z8V : ZIP design → Pin-Compatible with the HMS1M32M8V PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS1M32M8V_HanbitElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMS1M32Z8V
Manufacturer Hanbit Electronics
File Size 94.76 KB
Description SRAM MODULE 4Mbyte
Datasheet download datasheet HMS1M32Z8V Datasheet

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Other Datasheets by Hanbit Electronics

Part Number Description
HMS1M32Z8 SRAM MODULE 4Mbyte
HMS1M32Z8A SRAM
HMS1M32Z8L SRAM MODULE 4Mbyte
HMS1M32Z8S High-Speed SRAM MODULE 4Mbyte
HMS1M32M8A SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HANBit HAN BIT HMS1M32M8V SRAM MODULE 4Mbyte(1M x 32-Bit) 3.3V Part No. HMS1M32M8V, HMS1M32Z8V GENERAL DESCRIPTION The HMS1M32M8V is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of eight 1M x 4 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board. PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.