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HGTG12N60C3D - UFS Series N-Channel IGBT

General Description

The HGTG12N60C3D is a MOS gated high voltage switching device combining the best

Key Features

  • 24A, 600V at TC = 25 C Typical Fall Time.
  • . . . . 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode o.

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Datasheet Details

Part number HGTG12N60C3D
Manufacturer Harris Corporation
File Size 111.25 KB
Description UFS Series N-Channel IGBT
Datasheet download datasheet HGTG12N60C3D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package JEDEC STYLE TO-247 E C G January 1997 Features • • • • • 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode o Description The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123.