HGTG12N60C3D Overview
Key Specifications
Package: TO-247
Mount Type: Through Hole
Pins: 3
Height: 20.82 mm
Description
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- 24A, 600V at TC = 25 C Typical Fall Time
- 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode o
