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HGTG12N60C3D Datasheet

Ufs Series N-channel IGBT

Manufacturer: Harris Corporation

HGTG12N60C3D Overview

The HGTG12N60C3D is a MOS gated high voltage switching device bining the best.

HGTG12N60C3D Key Features

  • 24A, 600V at TC = 25 C Typical Fall Time
  • 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode

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