CD4519B Datasheet | Harris Semiconductor

gn and application requirements, and standard ratings and electrical characteristics for CMOS Bseries logic circuits, and on CMOS special function circuits (special interface and display driver circuits). Dynamic power dissipation has three ponents: 1. The dissipation that results from current that charges and discharges the external load capacitance of the output buffers. The dissipation of each output buffer is equal to CV2f, where C is the load capacitance, V is the supply voltage, and f is the switching frequency of that output. 2. The dissipation that results from current that charges and discharges the internal node capacitances. 3. The dissipation caused by the current spikes through the PMOS and NMOS transistors in series at the instant of switching. This ponent amounts to approximately 10% of the total dissipation, shown graphically in the datasheets of most CMOS circuits. All CMOS devices are rated at 200m W per package at the maximum operating ambient temperature rating (TA) of 125o C for all packages. Power ratings for temperatures below the maximum operating temperature are shown in the standard CMOS thermal derating chart in Figure 1. This chart assumes that the device is mounted and soldered (or placed in a socket) on a PC board; there is natural convection cooling, with the PC board mounted horizontally; and the pressure is standard (14.7psia). In addition to the overall package dissipation, device dissipation per output transistor is limited to 100m W maximum over the full package operating temperature range. General Operating and Handling Considerations The following paragraphs discuss some key operating and handling considerations that must be taken into account to achieve maximum advantage of the CMOS technology. Additional information on the operation and handling of CMOS integrated circuits is given in Application Note AN6525, “Guide to Better Handling and Operation of CMOS Integrated Circuits”. See Section 8, “How to Use Answer FAX”, in this...