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Semiconductor
Data Sheet
BUZ21
October 1998 File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ21)
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as
/Subject switching regulators, switching converters, motor drivers,
(19A, relay drivers, and drivers for high power bipolar switching
• 19A, 100V • rDS(ON) = 0.100Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
100V, transistors requiring high speed and low gate drive power. 0.100 This type can be operated directly from integrated circuits. Ohm, N- Formerly developmental type TA9854.
BUZ21 Datasheet
