Inchange Semiconductor BUZ21
N-Channel MOSFET
| Part No. | BUZ21 |
|---|---|
| Datasheet | BUZ21 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max)●SOA is Power Dissipation Limited
●High input impedance
●High speed switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.This type can be operated directly from integrated circuits.
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=55℃ 19 A IDM Drain Current-Single Plused 75 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc...