The BUZ21 is a Power Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | BUZ21 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | SIPMOS ® Power Transistor BUZ 21 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 . Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 100 V, VGS = 0 V, . |
| Part Number | BUZ21 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 21 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 21 VDS 100 V ID 21 A RDS(on) 0.085 Ω Package TO-220 AB Ordering Code C6707. min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 3 0.1 10 10 0.065 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS. |
| Part Number | BUZ21 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
BUZ21
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ21
Voss 100 V
Ros(on) 0.1 0
10 19 A
• 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE
SWITCHING (EN.
re DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)
* Introduced in 1988 week 44 June 1988 100 V 100 V ±20 V 19 A 75 A 75 W - 55 to 150 °C 150 °C E 55/150/56 1/4 187 BUZ21 THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _ amb Thermal resist. |
| Part Number | BUZ21 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
BUZ21
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.1Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to.
*Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) *SOA is Power Dissipation Limited *High input impedance *High speed switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION Designed for applications such as switching regulators, switching co. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BUZ21L | Siemens Semiconductor Group | Power Transistor |
| BUZ21SMD | Infineon | Power Transistor |
| BUZ216 | Siemens Semiconductor Group | Power Transistor |
| BUZ214 | Siemens Semiconductor Group | Power Transistor |
| BUZ213 | Siemens Semiconductor Group | Power Transistor |
| BUZ21L | Infineon | Power Transistor |
| BUZ215 | Inchange Semiconductor | N-Channel MOSFET Transistor |