IRF823 - N-Channel Power MOSFETs

Product Overview

Harris

Datasheet Details

Part number	IRF823
Manufacturer	Harris
File Size	44.37 KB
Description	N-Channel Power MOSFETs
Datasheet	IRF823 Datasheet
Note	This datasheet PDF includes multiple part numbers: IRF823, IRF820. Please refer to the document for exact specifications by model.
Additional preview pages of the IRF823 datasheet.

Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

Features

2.2A and 2.5A, 450V and 500V.
rDS(ON) = 3.0Ω and 4.0Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823.

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Other Datasheets by Harris

IRF820 - N-Channel Power MOSFETs
IRF821 - N-Channel Power MOSFETs
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IRF140 - N-Channel Power MOSFETs
IRF141 - N-Channel Power MOSFETs
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Published: Aug 8, 2014 |