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IRF821 - N-Channel Power MOSFETs

This page provides the datasheet information for the IRF821, a member of the IRF820 N-Channel Power MOSFETs family.

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

  • 2.2A and 2.5A, 450V and 500V.
  • rDS(ON) = 3.0Ω and 4.0Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823.

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Datasheet preview – IRF821

Datasheet Details

Part number IRF821
Manufacturer Harris
File Size 44.37 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF821 Datasheet
Additional preview pages of the IRF821 datasheet.

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Full PDF Text Transcription

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S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. November 1997 Features • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.
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