| Part Number | IRF821 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-C.
*Lower Input Capacitance *Improved Gate Charge *Extended Safe Operating Area *Rugged Gate Oxide Technology DESCRIPTION *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage G. |
IRF821 Datasheet and Specifications PDF
The IRF821 is a N-Channel MOSFET Transistor.
| Part Number | IRF821 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Motorola Semiconductor |
| Overview | . . |
| Part Number | IRF821 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Samsung Semiconductor |
| Overview | . . |
| Part Number | IRF821 Datasheet |
|---|---|
| Description | N-Channel Power MOSFETs |
| Manufacturer | Harris |
| Overview |
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo.
* 2.2A and 2.5A, 450V and 500V * rDS(ON) = 3.0Ω and 4.0Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to . |