Datasheet4U Logo Datasheet4U.com

MUR8100E - 700V - 1000V Ultrafast Diodes

This page provides the datasheet information for the MUR8100E, a member of the MUR870E 700V - 1000V Ultrafast Diodes family.

Datasheet Summary

Description

MUR870E, MUR880E, MUR890E, MUR8100E and RUR870, RUR880, RUR890, RUR8100 are ultrafast dual diodes (tRR < 75ns) with soft recovery characteristics.

They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

Features

  • Ultrafast with Soft Recovery Characteristic (tRR < 75ns).
  • +175 C Rated Junction Temperature.
  • Reverse Voltage Up to 1000V.
  • Avalanche Energy Rated o.

📥 Download Datasheet

Datasheet preview – MUR8100E

Datasheet Details

Part number MUR8100E
Manufacturer Harris
File Size 38.64 KB
Description 700V - 1000V Ultrafast Diodes
Datasheet download datasheet MUR8100E Datasheet
Additional preview pages of the MUR8100E datasheet.
Other Datasheets by Harris

Full PDF Text Transcription

Click to expand full text
S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Package JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) April 1995 Features • Ultrafast with Soft Recovery Characteristic (tRR < 75ns) • +175 C Rated Junction Temperature • Reverse Voltage Up to 1000V • Avalanche Energy Rated o Applications • Switching Power Supply • Power Switching Circuits • General Purpose Symbol K Description MUR870E, MUR880E, MUR890E, MUR8100E and RUR870, RUR880, RUR890, RUR8100 are ultrafast dual diodes (tRR < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
Published: |