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RF1S9540 - P-Channel MOSFET

Description

-15A and -19A, -80V and -100V rDS(ON) = 0.20Ω and 0.30Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Liter

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Datasheet Details

Part number RF1S9540
Manufacturer Harris
File Size 53.19 KB
Description P-Channel MOSFET
Datasheet download datasheet RF1S9540 Datasheet
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Semiconductor July 1998 IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs Features Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
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