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SEMICONDUCTOR May 1997
RFD10P03L, RFD10P03LSM, RFP10P03L
10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET
Features
Description
• 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature
Ordering Information
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
RFD10P03L Datasheet
