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RFD10P03LSM - 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET

Key Features

  • 10A, 30V.
  • rDS(ON) = 0.200Ω.
  • Temperature Compensating PSPICE® Model.
  • PSPICE Thermal Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFD10P03L RFD10P03LSM RFP10P03L.

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📁 Similar Datasheet

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFD10P03L 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
RFD12N06RLE 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
RFD12N06RLESM 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
RFD14N05L 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs
RFD14N05LSM 14A/ 50V/ 0.100 Ohm/ Logic Level/ N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 File Number 3515.2 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49205. Features • 10A, 30V • rDS(ON) = 0.