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RFD10P03LSM Datasheet 10a/ 30v/ 0.200 Ohm/ Logic Level/ P-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 File Number 3515.2 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49205.

Key Features

  • 10A, 30V.
  • rDS(ON) = 0.200Ω.
  • Temperature Compensating PSPICE® Model.
  • PSPICE Thermal Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFD10P03L RFD10P03LSM RFP10P03L.

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