Harris RFD10P03LSM
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.| Part No. | RFD10P03LSM |
|---|---|
| Datasheet | RFD10P03LSM Download |
| Manufacturer |  Harris |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
DESCRIPTION
● 10A, 30V● rDS(ON) = 0.200Ω
● Temperature Compensating PSPICE Model
● PSPICE Thermal Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● 175oC Operating Temperature Ordering Information These products are P-Channel power MOSFETs manufactured using the MegaFET process. These transistors can be operated directly from integrated circuits. Symbol PART NUMBER PACKAGE BRAND D RFD10P03L RFD10P03LSM TO-251AA TO-252AA 10P03L 10P03L G RFP10P03L TO-220AB F10P03L NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO
