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RFD10P03LSM - P-Channel Power MOSFET

Download the RFD10P03LSM datasheet PDF. This datasheet also covers the RFD10P03L variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

10A, 30V rDS(ON) = 0.200Ω Temperature Compensating PSPICE Model PSPICE Thermal Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Ordering Information These products are P-Channel power MOSFETs

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RFD10P03L-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RFD10P03LSM
Manufacturer Harris
File Size 271.70 KB
Description P-Channel Power MOSFET
Datasheet download datasheet RFD10P03LSM Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RFD10P03LSM 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET Intersil Corporation
RFD10P03L 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET Intersil Corporation
RFD12N06RLE 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET Fairchild Semiconductor
RFD12N06RLE 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs Intersil Corporation
RFD12N06RLESM 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET Fairchild Semiconductor

Other Datasheets by Harris

Part Number Description
RFD10P03L P-Channel Power MOSFET
RFD14N05 Avalanche Rated N-Channel Enhancement-Mode Power MOSFET
RFD14N05SM Avalanche Rated N-Channel Enhancement-Mode Power MOSFET
RFD16N03L Enhancement-Mode Power MOSFET
RFD16N03LSM Enhancement-Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR May 1997 RFD10P03L, RFD10P03LSM, RFP10P03L 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET Features Description • 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Ordering Information These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.