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RFD16N03LSM Datasheet Enhancement-mode Power MOSFET

Manufacturer: Harris

Overview: SEMICONDUCTOR RFD16N03L, RFD16N03LSM December 1995 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.

This process, which uses

Key Features

  • Packaging.
  • 16A, 30V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature JEDEC TO-252AA DRAIN (FLANGE).

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Intersil Corporation Logo RFD16N03LSM N-Channel Power MOSFET Intersil Corporation
Intersil Corporation Logo RFD16N03L N-Channel Power MOSFET Intersil Corporation
Intersil Corporation Logo RFD16N03 N-Channel Power MOSFET Intersil Corporation

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