Part RFD16N03LSM
Description Enhancement-Mode Power MOSFET
Category MOSFET
Manufacturer Harris
Size 130.03 KB
Pricing from 1.32 USD, available from Rochester Electronics and Win Source.
Harris

RFD16N03LSM Overview

Key Specifications

Max Operating Temp: 175 °C

Description

The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • rDS(ON) = 0.022Ω
  • Temperature Compensating PSPICE Model
  • Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • +175oC Operating Temperature JEDEC TO-252AA DRAIN (FLANGE)

Price & Availability

Seller Inventory Price Breaks Buy
Rochester Electronics 1977 100+ : 1.32 USD
500+ : 1.19 USD
1000+ : 1.1 USD
10000+ : 0.9775 USD
View Offer
Win Source 1480 55+ : 1.1208 USD
130+ : 0.9198 USD
195+ : 0.891 USD
270+ : 0.8622 USD
View Offer