Datasheet Details
| Part number | RFD16N03LSM |
|---|---|
| Manufacturer | Harris |
| File Size | 130.03 KB |
| Description | Enhancement-Mode Power MOSFET |
| Datasheet |
 RFD16N03LSM Datasheet
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General Description
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
Key Features
- Packaging.
- 16A, 30V.
- rDS(ON) = 0.022Ω.
- Temperature Compensating PSPICE Model.
- Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE.
- Peak Current vs Pulse Width Curve.
- UIS Rating Curve.
- +175oC Operating Temperature JEDEC TO-252AA DRAIN (FLANGE).