Harris RFD16N03LSM
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.| Part No. | RFD16N03LSM |
|---|---|
| Datasheet | RFD16N03LSM Download |
| Manufacturer |  Harris |
| Description | Enhancement-Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
Packaging● 16A, 30V
● rDS(ON) = 0.022Ω
● Temperature Compensating PSPICE Model
● Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● +175oC Operating Temperature JEDEC TO-252AA DRAIN (FLANGE)
DESCRIPTION
This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range,
