RFD16N03LSM - Enhancement-Mode Power MOSFET

Product Overview

Harris

Part number	RFD16N03LSM
Manufacturer	Harris
File Size	130.03 KB
Description	Enhancement-Mode Power MOSFET
Datasheet	RFD16N03LSM Datasheet
Note	This datasheet PDF includes multiple part numbers: RFD16N03LSM, RFD16N03L. Please refer to the document for exact specifications by model.
Additional preview pages of the RFD16N03LSM datasheet.

The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Packaging.
16A, 30V.
rDS(ON) = 0.022Ω.
Temperature Compensating PSPICE Model.
Can be Driven Directly from CMOS, NMOS, and TTL Circuits DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE.
Peak Current vs Pulse Width Curve.
UIS Rating Curve.
+175oC Operating Temperature JEDEC TO-252AA DRAIN (FLANGE).

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Published: Jan 21, 2017 |