Datasheet Summary
SEMICONDUCTOR
RFD16N03L, RFD16N03LSM
December 1995
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs
Features
Packaging
- 16A, 30V
- rDS(ON) = 0.022Ω
- Temperature pensating PSPICE Model
- Can be Driven Directly from CMOS, NMOS, and TTL Circuits
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE DRAIN GATE
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- +175oC Operating Temperature
JEDEC TO-252AA DRAIN (FLANGE)
Description
The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in...
