Datasheet Summary
RFD16N03L, RFD16N03LSM
Data Sheet April 1999 File Number
16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is acplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V)...
