RFD16N05L Datasheet | Intersil

RFD16N05L, RFD16N05LSM Data Sheet April 1999 File Number 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is acplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871. Features - 16A, 50V - r DS(ON) = 0.047Ω - UIS SOA Rating Curve (Single Pulse) - Design Optimized for 5V Gate Drives - Can be Driven Directly from CMOS, NMOS, TTL Circuits - patible with Automotive Drive Requirements - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER RFD16N05L RFD16N05LSM PACKAGE TO-251AA TO-252AA BRAND RFD16N05L RFD16N05LSM Symbol NOTE: When ordering, include the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) 6-163 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://.intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD16N05L,...