RFD16N05 Datasheet | Intersil

RFD16N05, RFD16N05SM Data Sheet July 1999 File Number 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the Mega FET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Features - 16A, 50V - r DS(ON) = 0.047Ω - Temperature pensating PSPICE® Model - Peak Current vs Pulse Width Curve - UIS Rating Curve - 175o C Operating Temperature - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Ordering Information PART NUMBER RFD16N05 RFD16N05SM PACKAGE TO-251AA TO-252AA BRAND F16N05 F16N05 Symbol NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A. Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) 4-420 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of Micro Sim Corporation. http://.intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 RFD16N05,...