MSA-1100
Features
- High Dynamic Range Cascadable 50␣ Ω or 75␣ Ω Gain Block
- 3 d B Bandwidth: 50␣ MHz to 1.6␣ GHz
- 17.5 d Bm Typical P1d B at 0.5␣ GHz
- 12␣ d B Typical 50␣ Ω Gain at 0.5␣ GHz
- 3.5␣ d B Typical Noise Figure at 0.5␣ GHz bining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The remended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.
Chip Outline[1]
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Description
The MSA-1100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is...
