H2N4124 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the H2N4124, a member of the H2N4124_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The H2N4124 is designed for general purpose switching and amplifier applications.

Features

Complementary to H2N4126.
Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	H2N4124
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	45.24 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N4124 Datasheet
Additional preview pages of the H2N4124 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N4124 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.20 Page No. : 1/4 Description The H2N4124 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4126 • Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)..................................

Published: Mar 22, 2005 |