H2N4124 - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the H2N4124 datasheet PDF. This datasheet also covers the H2N4124_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The H2N4124 is designed for general purpose switching and amplifier applications.

Key Features

Complementary to H2N4126.
Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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H2N4124 npn epitaxial planar transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H2N4124_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H2N4124
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	45.24 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N4124 Datasheet

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Full PDF Text Transcription for H2N4124 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for H2N4124. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text

HI-SINCERITY MICROELECTRONICS CORP. H2N4124 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6240 Issued Date : 1992.11.25 Revised Date : 2005.01.20 Page No. : 1/4 Description The H2N4124 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4126 • Low Collector to Emitter Saturation Voltage TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)..................................