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H2N4126 - PNP EPITAXIAL PLANAR TRANSISTOR

Product Overview

Hi-Sincerity Mocroelectronics

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H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – H2N4126

Datasheet Details

Part number	H2N4126
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	46.73 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N4126 Datasheet
Note	This datasheet PDF includes multiple part numbers: H2N4126, H2N4126_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H2N4126 datasheet.

Product details

Description

The H2N4126 is designed for general purpose switching and amplifier applications.

Features

Complementary to H2N4124.
High Power PT: 625mW at 25°C.
High DC Current Gain hFE: 120-360 at IC=2mA TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base.

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Published: Mar 22, 2005 |