• Part: H2N5087
  • Description: PNP EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 49.47 KB
Download H2N5087 Datasheet PDF
Hi-Sincerity Mocroelectronics
H2N5087
Description This device was designed for low noise,high gain,general purpose amplifier applications for 1u A to 25m A collector current. Absolute Maximum Ratings TO-92 - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 m W - Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage...