H2N5087 - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the H2N5087 datasheet PDF. This datasheet also covers the H2N5087_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation T

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H2N5087 pnp epitaxial planar transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (H2N5087_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	H2N5087
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	49.47 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	H2N5087 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HI-SINCERITY MICROELECTRONICS CORP. H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6210 Issued Date : 1998.02.01 Revised Date : 2005.01.20 Page No. : 1/5 Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ......................................................................