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H2N5089 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the H2N5089 datasheet PDF. This datasheet also covers the H2N5089_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Amplifier Transistor.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW Maximum Voltages and Currents (TA=25°C) VCBO Collect

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Note: The manufacturer provides a single datasheet file (H2N5089_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N5089
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.33 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet H2N5089 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6273 Issued Date : 1993.12.08 Revised Date : 2005.01.20 Page No. : 1/4 Description Amplifier Transistor. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................................