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H2N6718L - NPN Transistor

This page provides the datasheet information for the H2N6718L, a member of the H2N6718L_Hi NPN Transistor family.

Datasheet Summary

Description

The H2N6718L is designed for general purpose medium power amplifier and switching applications.

Features

  • High Power: 850mW.
  • High Current: 1A TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 850 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage.

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Datasheet preview – H2N6718L

Datasheet Details

Part number H2N6718L
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.28 KB
Description NPN Transistor
Datasheet download datasheet H2N6718L Datasheet
Additional preview pages of the H2N6718L datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6218 Issued Date : 1992.11.25 Revised Date : 2004.05.03 Page No. : 1/5 H2N6718L NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718L is designed for general purpose medium power amplifier and switching applications. Features • High Power: 850mW • High Current: 1A TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) .................................................
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