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H2N6718V - NPN Transistor

This page provides the datasheet information for the H2N6718V, a member of the H2N6718V_Hi NPN Transistor family.

Datasheet Summary

Description

The H2N6718V is designed for general purpose medium power amplifier and switching.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 1.6

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Datasheet Details

Part number H2N6718V
Manufacturer Hi-Sincerity Mocroelectronics
File Size 44.06 KB
Description NPN Transistor
Datasheet download datasheet H2N6718V Datasheet
Additional preview pages of the H2N6718V datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6616 Issued Date : 1993.09.24 Revised Date : 2006.02.20 Page No. : 1/5 Description The H2N6718V is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings TO-126ML • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C)...........................................................................................................
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