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HE8050 - NPN TRANSISTOR

Download the HE8050 datasheet PDF. This datasheet also covers the HE8050_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.

Key Features

  • High total power dissipation (PT: 2W, TC=25°C).
  • High collector current (IC: 1.5A) TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1 W.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HE8050_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HE8050
Manufacturer Hi-Sincerity Mocroelectronics
File Size 45.18 KB
Description NPN TRANSISTOR
Datasheet download datasheet HE8050 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2004.11.29 Page No. : 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ...................................................................................................................