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HI31C - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HI31C datasheet PDF. This datasheet also covers the HI31C_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HI31C is designed for use in general purpose amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HI31C_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HI31C
Manufacturer Hi-Sincerity Mocroelectronics
File Size 65.40 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HI31C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2002.03.04 Page No. : 1/3 HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .....................................................................................