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HIRF730F Datasheet N-channel Power MOSFET

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Third Generation HEXFETs from international Rectifier provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Key Features

  • Dynamic dv/dt Rating.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF730 Series Symbol D G S Absolute Maximum Ratings Symbol VDS.

More Datasheets from Hi-Sincerity Mocroelectronics

Part Number Description
HIRF730 N-CHANNEL POWER MOSFET
HIRF740 N-Channel Power MOSFET
HIRF740F N-Channel Power MOSFET
HIRF630 N-Channel MOSFET
HIRF830 N-CHANNEL POWER MOSFET
HIRF830F N-CHANNEL POWER MOSFET
HIRF840 N-Channel Power MOSFET
HIRF840F N-Channel Power MOSFET

HIRF730F Distributor