Datasheet Details
| Part number | HIRF730F |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 81.19 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
 HIRF730F Datasheet
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General Description
Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
- Dynamic dv/dt Rating.
- Repetitive Avalanche Rated.
- Fast Switching.
- Ease of Paralleling.
- Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W HIRF730 Series Symbol D G S Absolute Maximum Ratings Symbol VDS.