HIRF840 Datasheet | Hi-Sincerity Mocroelectronics

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 1/4 HIRF840 / HIRF840F N-CHANNEL POWER MOSFET Description This N - Channel MOSFETs provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. Features - Dynamic dv/dt Rating - Repetitive Avalanche Rated - Fast Switching - Ease of Paralleling - Simple Drive Requirements Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max. Value TO-220AB 1.71 TO-220FP Units °C/W °C/W HIRF840 Series Pin...