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HLB123T - NPN Transistor

Download the HLB123T datasheet PDF. This datasheet also covers the HLB123T_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HLB123T is designed for high voltage.

High speed switching inductive circuits and amplifier applications.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability TO-126 Absolute Maximum Ratings (TA=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 3.5 W Total Power Dissipation (TC=25°C).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HLB123T_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HLB123T
Manufacturer Hi-Sincerity Mocroelectronics
File Size 40.99 KB
Description NPN Transistor
Datasheet download datasheet HLB123T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200402 Issued Date : 1993.05.15 Revised Date : 2006.02.20 Page No. : 1/4 HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-126 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ...................................................................................................................